์นดํ…Œ๊ณ ๋ฆฌ ์—†์Œ

์ฐจ๋Ÿ‰์šฉ ์ „๋ ฅ๋ฐ˜๋„์ฒด ๋ชจ๋“ˆ์˜ TC ์‹œํ—˜ ์ค‘ ์†”๋” ์กฐ์ธํŠธ ์—ดํ”ผ๋กœ ๊ท ์—ด ์›์ธ ๋ถ„์„ ๋ฐ ๊ณผ๋„ ์—ด์‘๋ ฅ ํ•ด์„ ์ตœ์ ํ™”

๊ฒŒ์ž„๊ต์ˆ˜ 2026. 10. 12. 16:02
๋ฐ˜์‘ํ˜•

๐ŸŒ English Abstract

This comprehensive technical guide addresses solder joint thermal fatigue cracking caused by Coefficient of Thermal Expansion (CTE) mismatches during Temperature Cycling (TC) reliability tests in automotive power semiconductor modules. It covers fundamental failure mechanisms, advanced material countermeasures such as high-reliability alloys and silver sintering, and practical transient thermal-structural finite element analysis (FEA) optimization strategies using the Anand viscoplasticity model. Engineers can leverage these troubleshooting workflows and submodeling techniques to achieve robust power module designs compliant with stringent automotive standards like AQG 324.

์ „๊ธฐ์ž๋™์ฐจ(EV) ๋ฐ ์ˆ˜์†Œ์—ฐ๋ฃŒ์ „์ง€์ฐจ(FCEV)์˜ ์ธ๋ฒ„ํ„ฐ(Inverter), ์ปจ๋ฒ„ํ„ฐ(Converter) ํ•ต์‹ฌ๋ถ€ํ’ˆ์ธ ์ฐจ๋Ÿ‰์šฉ ์ „๋ ฅ๋ฐ˜๋„์ฒด ๋ชจ๋“ˆ(Automotive Power Semiconductor Module)์€ ๋งค์šฐ ๊ฐ€ํ˜นํ•œ ์—ด์ ยท์ „๊ธฐ์  ํ™˜๊ฒฝ์—์„œ ์ž‘๋™ํ•ฉ๋‹ˆ๋‹ค. ๊ณ ์ „๋ ฅ ๋ฐ€๋„ํ™”์™€ ํ•จ๊ป˜ SiC(์‹ค๋ฆฌ์ฝ˜ ์นด๋ฐ”์ด๋“œ), GaN(๊ฐˆ๋ฅจ ๋‚˜์ดํŠธ๋ผ์ด๋“œ) ๋“ฑ ์ฐจ์„ธ๋Œ€ ์ „๋ ฅ์†Œ์ž ๋„์ž…์ด ๊ฐ€์†ํ™”๋˜๋ฉด์„œ, ๋ชจ๋“ˆ ๋‚ด๋ถ€์—์„œ ๋ฐœ์ƒํ•˜์—ฌ ์™ธ๋ถ€๋กœ ๋ฐฉ์ถœ๋˜๋Š” ์—ด์†(Heat Flux)์˜ ํฌ๊ธฐ๋Š” ๊ณผ๊ฑฐ์™€ ๋น„๊ตํ•  ์ˆ˜ ์—†์„ ์ •๋„๋กœ ์ปค์กŒ์Šต๋‹ˆ๋‹ค.

์ฐจ๋Ÿ‰์šฉ ๋ถ€ํ’ˆ ์‹ ๋ขฐ์„ฑ ๊ทœ๊ฒฉ์ธ AEC-Q101 ๋ฐ AQG 324 ํ‘œ์ค€์— ๋”ฐ๋ฅด๋ฉด, ์ „๋ ฅ๋ฐ˜๋„์ฒด ๋ชจ๋“ˆ์€ ๊ทน์‹ฌํ•œ ์˜จ๋„ ๋ณ€ํ™” ์กฐ๊ฑด์ธ ์˜จ๋„ ์‚ฌ์ดํด ์‹œํ—˜(TC, Temperature Cycling Test, -40ยฐC ~ 150ยฐC/175ยฐC)์„ ์ˆ˜์ฒœ ์‚ฌ์ดํด ์ด์ƒ ๊ฒฌ๋ŽŒ๋‚ด์•ผ ํ•ฉ๋‹ˆ๋‹ค. ํ•˜์ง€๋งŒ ๊ฐœ๋ฐœ ๊ฒ€์ฆ ๋‹จ๊ณ„์—์„œ ๊ฐ€์žฅ ๋นˆ๋ฒˆํ•˜๊ฒŒ ๋ฐœ์ƒํ•˜๋Š” ์ฃผ์š” ์น˜๋ช…์  ๊ณ ์žฅ ๋ชจ๋“œ(Critical Failure Mode) ์ค‘ ํ•˜๋‚˜๊ฐ€ ๋ฐ”๋กœ ๋‹ค์ธต ๊ตฌ์กฐ ๋ฌผ์งˆ ๊ฐ„ ์—ดํŒฝ์ฐฝ๊ณ„์ˆ˜(CTE, Coefficient of Thermal Expansion) ๋ถˆ์ผ์น˜๋กœ ์ธํ•œ ์†”๋” ์กฐ์ธํŠธ(Solder Joint) ์—ดํ”ผ๋กœ ๊ท ์—ด(Thermal Fatigue Cracking)์ž…๋‹ˆ๋‹ค.

๋ณธ ๊ธ€์—์„œ๋Š” ์‹ค๋ฌด ์—”์ง€๋‹ˆ์–ด๋“ค์ด ํ˜„์—…์—์„œ ๊ฒช๋Š” ์†”๋” ์ ‘ํ•ฉ๋ถ€ ํŒŒ์† ํ˜„์ƒ์„ ๊ทผ๋ณธ์ ์œผ๋กœ ํ•ด๊ฒฐํ•˜๊ธฐ ์œ„ํ•œ ๋ฏธ์„ธ์กฐ์ง ํŒŒ๊ดด ๋ฉ”์ปค๋‹ˆ์ฆ˜ ๋ถ„์„, ์†Œ์žฌ ๋ฐ ๊ตฌ์กฐ ๊ฐœ์„  ๋ฐฉ์•ˆ, ๊ทธ๋ฆฌ๊ณ  ์ •๋ฐ€ํ•œ ๊ณผ๋„ ์—ด์‘๋ ฅ ํ•ด์„(Transient Thermal Stress Analysis) ์ตœ์ ํ™” ํŠธ๋Ÿฌ๋ธ”์ŠˆํŒ… ์ ˆ์ฐจ๋ฅผ ์ƒ์„ธํžˆ ๊ธฐ์ˆ ํ•ฉ๋‹ˆ๋‹ค.



1. CTE ๋ถˆ์ผ์น˜์™€ ์†”๋” ์กฐ์ธํŠธ ์—ดํ”ผ๋กœ ๊ท ์—ด ๋ฉ”์ปค๋‹ˆ์ฆ˜

์ „๋ ฅ๋ฐ˜๋„์ฒด ๋ชจ๋“ˆ์€ ์—ฌ๋Ÿฌ ๋ ˆ์ด์–ด๊ฐ€ ์„ธ๋ผ๋ฏน ๋ฐ ๊ธˆ์† ์ ‘ํ•ฉ ๊ธฐ์ˆ ๋กœ ๊ฒฐํ•ฉ๋œ ์ˆ˜์ง ์ˆ˜ํ‰์  ์ ์ธต ๊ตฌ์กฐ๋ฅผ ๊ฐ€์ง‘๋‹ˆ๋‹ค. ๋Œ€ํ‘œ์ ์ธ ๊ตฌ์„ฑ ์š”์†Œ์™€ ๊ฐ ์žฌ๋ฃŒ๋ณ„ ์—ดํŒฝ์ฐฝ๊ณ„์ˆ˜(CTE)๋Š” ๋‹ค์Œ๊ณผ ๊ฐ™์Šต๋‹ˆ๋‹ค.

  • ์ „๋ ฅ๋ฐ˜๋„์ฒด ๋‹ค์ด(Power Die, Si/SiC): CTE 2.6 ~ 3.7 ppm/K
  • ๊ธฐํŒ ์ ˆ์—ฐ์ฒด(DBC Substrate - Al2O3, Si3N4): CTE 3.0 ~ 7.0 ppm/K
  • ๊ธฐํŒ ์ƒ/ํ•˜๋ถ€ ๋™๋ฐ•(Copper Layer): CTE 16.5 ~ 17.5 ppm/K
  • ์†”๋” ์ ‘ํ•ฉ์ธต(Solder Layer - SAC305 ๋“ฑ): CTE 20.0 ~ 22.0 ppm/K
  • ๋ฐฉ์—ด ํžˆํŠธ์‹ฑํฌ ๋ฒ ์ด์Šคํ”Œ๋ ˆ์ดํŠธ(Baseplate - Cu): CTE 16.5 ~ 17.0 ppm/K

TC ์‹œํ—˜ ์ง„ํ–‰ ์‹œ -40ยฐC์˜ ๊ทน์ €์˜จ๊ณผ 150ยฐC ์ด์ƒ์˜ ๊ณ ์˜จ์ด ์ฃผ๊ธฐ์ ์œผ๋กœ ๋ฐ˜๋ณต๋˜๋ฉด, ์ธ์ ‘ํ•œ ์žฌ๋ฃŒ ๋ ˆ์ด์–ด ์‚ฌ์ด์˜ CTE ์ฐจ์ด๋กœ ์ธํ•ด ์ด์ƒ ์ธํ„ฐํŽ˜์ด์Šค(Interface)์—์„œ ๊ฐ•๋ ฅํ•œ ์ „๋‹จ ๋ณ€ํ˜•๋ฅ (Shear Strain)์ด ์œ ๋ฐœ๋ฉ๋‹ˆ๋‹ค. ํŠนํžˆ ๋‹ค์ด ์•„๋ž˜์˜ Chip-attach ์†”๋”์™€ DBC ๊ธฐํŒ ์•„๋ž˜์˜ System ์†”๋”์ธต์€ ์ƒ๋Œ€์ ์œผ๋กœ ์˜๋ฅ (Young's Modulus)์ด ๋‚ฎ๊ณ  ๊ฐ€๊ณต๊ฒฝํ™”์œจ์ด ๋–จ์–ด์ ธ ์œ ๋ฐœ๋œ ๋ณ€ํ˜• ์—๋„ˆ์ง€์˜ ๋Œ€๋ถ€๋ถ„์„ ํก์ˆ˜ํ•˜๊ฒŒ ๋ฉ๋‹ˆ๋‹ค.

์—ดํ”ผ๋กœ ์ง„ํ–‰ ๋‹จ๊ณ„ ๋ฐ ํฌ๋ฆฌํ”„ ๋ณ€ํ˜•(Creep Deformation)

์†”๋”์žฌ์ธ Sn-Ag-Cu๊ณ„(SAC305 ๋“ฑ) ์ƒ์šฉ ์œตํ•ฉ ์žฌ๋ฃŒ๋Š” ์œต์ (Absolute Melting Temperature) ๋Œ€๋น„ ์ƒ์˜จ ๋™์ž‘ ์˜จ๋„๊ฐ€ ๋†’์•„, ๊ณ ์˜จ ์œ ์ง€ ์‹œ๊ฐ„(Dwell Time) ๋™์•ˆ ์‹œ๊ฐ„ ์˜์กด์  ํฌ๋ฆฌํ”„ ๋ณ€ํ˜•(Time-dependent Creep Strain)์ด ๊ตฌ๋™๋ฉ๋‹ˆ๋‹ค. ์˜จ๋„ ์‚ฌ์ดํด์ด ๋ฐ˜๋ณต๋˜๋ฉด ๋‹ค์Œ๊ณผ ๊ฐ™์€ ๋‹จ๊ณ„๋กœ ํŒŒ์†์ด ์ผ์–ด๋‚ฉ๋‹ˆ๋‹ค.

  1. ์‘๋ ฅ ์ง‘์ค‘(Stress Concentration): ๋ชจ๋“ˆ edge ๋‹จ๋ถ€ ๋ฐ ๋ชจ์„œ๋ฆฌ ์˜์—ญ ์†”๋” ์กฐ์ธํŠธ์— ์ „๋‹จ ์‘๋ ฅ์ด ์ˆ˜์ง‘๋จ.
  2. ๋ฏธ์„ธ ๋ณด์ด๋“œ ๋ฐ ๋ฏธ์„ธ ๊ท ์—ด ๋ฐœ์ƒ(Micro-crack Initiation): ๊ฒฐ์ •๋ฆฝ๊ณ„(Grain Boundary)๋ฅผ ๋”ฐ๋ผ ๋น„๊ฐ€์—ญ์  ์†Œ์„ฑ ๋ณ€ํ˜• ์—๋„ˆ์ง€(Plastic Strain Energy)๊ฐ€ ๋ˆ„์ ๋˜์–ด ๋ฏธ์„ธ ํŒŒ์† ๊ฐœ์‹œ.
  3. ๊ท ์—ด ์ง„์ „(Crack Propagation): ๊ธˆ์†๊ฐ„ ํ™”ํ•ฉ๋ฌผ(IMC, Intermetallic Compound - Cu6Sn5, Cu3Sn) ๋ ˆ์ด์–ด ๋ถ€๊ทผ์„ ๋”ฐ๋ผ ์ค‘์•™๋ถ€ ๋ฐฉํ–ฅ์œผ๋กœ ๊ท ์—ด ํ™•๋Œ€.
  4. ์—ด์ €ํ•ญ ๊ธ‰์ฆ ๋ฐ ์ตœ์ข… ํŒŒ์†(Thermal Impedance Spike): ๊ท ์—ด๋กœ ์ธํ•œ ์ ‘ํ•ฉ ๋ฉด์  ๊ฐ์†Œ๋กœ ์—ด์ €ํ•ญ($R_{th}$)์ด ํฌ๊ฒŒ ์ฆ๊ฐ€ํ•˜๋ฉฐ ๋ฐ˜๋„์ฒด junction ์˜จ๋„๊ฐ€ ๊ธ‰์ƒ์Šน(Thermal Runaway), ์ตœ์ข… ์ „๋ ฅ ์†Œ์ž ๋ž˜์น˜์—… ๋˜๋Š” ์ „๊ธฐ์  ๋‹จ๋ฝ(Short) ๋ฐœ์ƒ.

2. ์†”๋” ์กฐ์ธํŠธ ์—ดํ”ผ๋กœ ๊ท ์—ด ํ˜„์žฅ ํŠธ๋Ÿฌ๋ธ”์ŠˆํŒ… ๋Œ€์‘ ๋ฐฉ์•ˆ

TC ์‹œํ—˜ ๋„์ค‘ ์†”๋” ๊ท ์—ด์ด ๊ฒ€์ถœ๋˜์—ˆ์„ ๋•Œ ์‹ค๋ฌด ์—ฐ๊ตฌ๊ฐœ๋ฐœ ํ˜„์žฅ์—์„œ ์ฆ‰๊ฐ ์ ์šฉํ•  ์ˆ˜ ์žˆ๋Š” ๋‹จ๊ณ„๋ณ„ ํŠธ๋Ÿฌ๋ธ”์ŠˆํŒ… ๋Œ€์ฑ…์ž…๋‹ˆ๋‹ค.

๊ฐ€. ๊ณ ์‹ ๋ขฐ์„ฑ ์‹ ์†Œ์žฌ ์ ์šฉ (Advanced Solder Alloys & Ag Sintering)

๊ธฐ์กด ์ผ๋ฐ˜ SAC305 ์†”๋”๋Š” ๊ณ ์˜จ ์ „๋ ฅ ์‚ฌ์ดํด ๋ฐ TC ํ™˜๊ฒฝ์—์„œ ์—ดํ”ผ๋กœ ํŠน์„ฑ์ด ์ทจ์•ฝํ•ฉ๋‹ˆ๋‹ค. ์ด๋ฅผ ๊ทน๋ณตํ•˜๊ธฐ ์œ„ํ•ด ๋‹ค์Œ๊ณผ ๊ฐ™์€ ๋Œ€์•ˆ ๋ฌผ์งˆ์„ ์ ์šฉํ•ฉ๋‹ˆ๋‹ค.

  • Innolot ๊ณ„์—ด ๋„ํ•‘ ์†”๋” alloy: Sn-Ag-Cu ์ฒด๊ณ„์— Sb(์•ˆํ‹ฐ๋ชจ๋‹ˆ), Ni(๋‹ˆ์ผˆ), Bi(๋น„์Šค๋ฌดํŠธ) ๋“ฑ์„ ์ฒจ๊ฐ€ํ•˜์—ฌ ๊ณ ์˜จ ํฌ๋ฆฌํ”„ ์ €ํ•ญ์„ฑ๊ณผ ๋ฏธ์„ธ์กฐ์ง ๊ณ ์˜จ ์•ˆ์ •์„ฑ(Microstructural Stability)์„ ํš๊ธฐ์ ์œผ๋กœ ๊ฐœ์„ ํ•ฉ๋‹ˆ๋‹ค.
  • ์€ ์€์‹คํ„ฐ๋ง(Ag Sintering, Silver Sintering): ์ฐจ์„ธ๋Œ€ ์ „๋ ฅ๋ชจ๋“ˆ(SiC)์— ๋น ๋ฅด๊ฒŒ ๋„์ž…๋˜๊ณ  ์žˆ๋Š” ๊ธฐ์ˆ ๋กœ, ๋‚˜๋…ธ/๋งˆ์ดํฌ๋กœ Ag ํŒŒํ‹ฐํด์„ ๊ฐ€์••/๋น„๊ฐ€์•• ์†Œ๊ฒฐํ•˜์—ฌ ์ ‘ํ•ฉ์ธต์„ ํ˜•์„ฑํ•ฉ๋‹ˆ๋‹ค. Ag ์†Œ๊ฒฐ์ธต์˜ ์œต์ ์€ 960ยฐC์— ๋‹ฌํ•ด ๊ณ ์˜จ ์ž‘๋™ ํ™˜๊ฒฝ์—์„œ ํฌ๋ฆฌํ”„ ํŒŒ์†์ด ์ „ํ˜€ ๋ฐœ์ƒํ•˜์ง€ ์•Š์œผ๋ฉฐ, ์—ด์ „๋„์œจ ๋˜ํ•œ 200 W/mยทK ์ด์ƒ์œผ๋กœ ์†”๋”(50 W/mยทK) ๋Œ€๋น„ ์›”๋“ฑํ•ฉ๋‹ˆ๋‹ค.

๋‚˜. ๊ตฌ์กฐ ๋ฐ ๋ ˆ์ด์•„์›ƒ ์ตœ์ ํ™” (Structural Modifications)

๊ตฌ์กฐ์  ๋ถˆ๊ท ํ˜•์— ์˜ํ•œ ์‘๋ ฅ์ง‘์ค‘ ํ˜„์ƒ์„ ์™„ํ™”์‹œํ‚ค๋Š” ๋ฐฉ์‹์ž…๋‹ˆ๋‹ค.

  • DBC ์„ธ๋ผ๋ฏน ์žฌ์งˆ ๊ต์ฒด: ๊ธฐํŒ ์ ˆ์—ฐ์ฒด ์žฌ์งˆ์„ ๊ธฐ์กด Al2O3(CTE ~7 ppm/K)์—์„œ mechanical property ๋ฐ ์ถฉ๊ฒฉ ์ €ํ•ญ์„ฑ์ด ์›”๋“ฑํ•œ Si3N4(์‹ค๋ฆฌ์ฝ˜ ๋‚˜์ดํŠธ๋ผ์ด๋“œ, CTE ~3 ppm/K)๋กœ ๊ต์ฒดํ•˜์—ฌ Si/SiC ๋‹ค์ด์™€์˜ CTE ๊ฐญ์„ ์ตœ์†Œํ™”ํ•ฉ๋‹ˆ๋‹ค.
  • Baseplate Dimple Patterning: ๊ตฌ๋ฆฌ ๋ฒ ์ด์Šคํ”Œ๋ ˆ์ดํŠธ ํ•˜๋‹จ ๋ฐ ์ ‘ํ•ฉ๋ถ€์— ๋”คํ”Œ(Dimple) ํŒจํ„ด์ด๋‚˜ ์ŠคํŠธ๋ ˆ์Šค ๋ฆฌ์‹œ๋ธŒ ํ™ˆ์„ ๊ฐ€๊ณตํ•˜์—ฌ ์˜จ๋„ ๋ณ€ํ™”์— ๋”ฐ๋ฅธ ๊ตฝํž˜ ๋ชจ๋ฉ˜ํŠธ(Bending Moment) warping์„ ๋ถ„์‚ฐ์‹œํ‚ต๋‹ˆ๋‹ค.
  • Mo/Cu-W Buffer Plate ์‚ฝ์ž…: ๋‹ค์ด์™€ DBC ์‚ฌ์ด ๋˜๋Š” DBC์™€ ๋ฒ ์ด์Šคํ”Œ๋ ˆ์ดํŠธ ์‚ฌ์ด์— ์—ดํŒฝ์ฐฝ ์™„ํ™”์šฉ ๋ชฐ๋ฆฌ๋ธŒ๋ด(Mo) ์™„์ถฉ์žฌ๋ฅผ ์ ์šฉํ•ฉ๋‹ˆ๋‹ค.

๋‹ค. ๊ณต์ • ํ”„๋กœ์„ธ์Šค ์ตœ์ ํ™” (Process Tuning)

์†”๋” ์ ‘ํ•ฉ๋ถ€ ๋‚ด๋ถ€์˜ ๋ณด์ด๋“œ(Void)๋Š” ํ”ผ๋กœ ๊ท ์—ด ์ง„์ „ ์†๋„๋ฅผ ์ˆ˜๋ฐฐ ์ด์ƒ ๊ฐ€์†ํ™”ํ•˜๋Š” ์‘๋ ฅ ์ง‘์ค‘์›์œผ๋กœ ์ž‘์šฉํ•ฉ๋‹ˆ๋‹ค.

  • ์ง„๊ณต ๋ฆฌํ”Œ๋กœ์šฐ(Vacuum Reflow): ๋ฆฌํ”Œ๋กœ์šฐ ๋ฆฌํ€ด๋”์Šค(Liquidus) ์ƒํƒœ์—์„œ ์ง„๊ณต ์ฑ”๋ฒ„ ๊ฐ์••์„ ์‹ค์‹œํ•˜์—ฌ ์†”๋” ๋‚ด ๋‚ด๋ถ€ ๋ณด์ด๋“œ์œจ์„ 1% ๋ฏธ๋งŒ ์ˆ˜์ค€์œผ๋กœ ํ†ต์ œํ•ฉ๋‹ˆ๋‹ค.
  • IMC ์ธต ๋‘๊ป˜ ๊ด€๋ฆฌ: ๋ฆฌํ”Œ๋กœ์šฐ ์ตœ๊ณ  ์˜จ๋„(Peak Temp) ๋ฐ ์œ ์ง€ ์‹œ๊ฐ„์„ ์ตœ์ ํ™”ํ•˜์—ฌ ์ทจ์„ฑ์ด ๊ฐ•ํ•œ Cu6Sn5 ๊ธˆ์†๊ฐ„ ํ™”ํ•ฉ๋ฌผ ์ธต์˜ ๋‘๊ป˜๊ฐ€ 3~5ใŽ›๋ฅผ ๋„˜์ง€ ์•Š๋„๋ก ์—„๊ฒฉํžˆ ์ปจํŠธ๋กคํ•ฉ๋‹ˆ๋‹ค.


3. ๊ณผ๋„ ์—ด์‘๋ ฅ ํ•ด์„(Transient Thermal Stress Analysis) ์ตœ์ ํ™”

์‹œ์ œํ’ˆ ์ œ์ž‘ ๋ฐ TC ์‹ ๋ขฐ์„ฑ ์‹œํ—˜(์ฃผ๊ธฐ๋‹น ์•ฝ 1~2์‹œ๊ฐ„ ์†Œ์š”, 1000 ์‚ฌ์ดํด ์ง„ํ–‰ ์‹œ ์ˆ˜๊ฐœ์›” ์†Œ์š”)์˜ ๋น„์šฉ๊ณผ ์‹œ๊ฐ„์„ ๋‹จ์ถ•ํ•˜๊ธฐ ์œ„ํ•ด ์œ ํ•œ์š”์†Œํ•ด์„(FEA, Finite Element Analysis) ์‹œ๋ฎฌ๋ ˆ์ด์…˜์˜ ์ •ํ™•๋„๋ฅผ ๋Œ์–ด์˜ฌ๋ฆฌ๋Š” ์ •๋ฐ€ ๊ธฐ๋ฒ•์ด ํ•„์ˆ˜์ ์ž…๋‹ˆ๋‹ค.

๊ฐ€. ์•„๋‚œ๋“œ ํฌ๋ฆฌํ”„ ๋ฌผ์„ฑ ๋ชจ๋ธ (Anand Viscoplasticity Constitutive Model)

์†”๋” ์žฌ๋ฃŒ์˜ ํƒ„์†Œ์„ฑ ๋ณ€ํ˜•๊ณผ ์‹œ๊ฐ„ ์˜์กด์  ํฌ๋ฆฌํ”„ ๋™์‹œ ๊ฑฐ๋™์„ ๋ชจ์‚ฌํ•˜๊ธฐ ์œ„ํ•ด ํ•ด์„ ์†Œํ”„ํŠธ์›จ์–ด(ANSYS, Abaqus ๋“ฑ)์—์„œ Anand ๋ชจ๋ธ์„ ํ™œ์šฉํ•ฉ๋‹ˆ๋‹ค. Anand ๋ชจ๋ธ์€ ๋ณ€ํ˜•๋ฅ  ์†๋„ ๊ฐ๋„, ๋ณ€ํ˜• ๊ฒฝํ™”, ์—ฐํ™” ๋ฐ ํšŒ๋ณต ํšจ๊ณผ๋ฅผ 9๊ฐœ์˜ ํŒŒ๋ผ๋ฏธํ„ฐ($A, Q/R, m, \xi, s_0, \hat{s}, n, a, m$)๋กœ ์ •ํ™•ํ•˜๊ฒŒ ์ˆ˜์‹ํ™”ํ•ฉ๋‹ˆ๋‹ค.

Anand Parameter ๋ฌผ๋ฆฌ์  ์˜๋ฏธ (Physical Meaning) SAC305 ๊ธฐ์ค€ ํ‘œ์ค€๋ฒ”์œ„ ์˜ˆ์‹œ
A (Pre-exponential factor) ์ง€์ˆ˜ ์•ž ๊ณ„์ˆ˜ (1/sec) 1.5 ~ 3.5 ร— 107
Q/R (Activation Energy / Gas Const) ๋ณ€ํ˜• ํ™œ์„ฑํ™” ์—๋„ˆ์ง€ (K) 9,000 ~ 11,000
s0 (Initial Value of Deformation Resistance) ์ดˆ๊ธฐ ๋ณ€ํ˜• ์ €ํ•ญ๊ฐ’ (MPa) 30 ~ 45
a (Strain Rate Sensitivity of Hardening) ๊ฒฝํ™”์˜ ๋ณ€ํ˜•๋ฅ  ์†๋„ ๋ฏผ๊ฐ๋„ 1.3 ~ 1.7

๋‚˜. ๊ธ€๋กœ๋ฒŒ-๋กœ์ปฌ ์„œ๋ธŒ๋ชจ๋ธ๋ง(Global-Local Submodeling) ๊ธฐ๋ฒ•

์ „๋ ฅ๋ชจ๋“ˆ ์ „์ฒด ์‹œ์Šคํ…œ์„ ๋ฏธ์„ธ ์†”๋” ๊ฒฐ์ •๋ฆฝ ํฌ๊ธฐ(๋งˆ์ดํฌ๋กœ๋ฏธํ„ฐ ๋‹จ์œ„) ์ˆ˜์ค€์œผ๋กœ ๋ฉ”์‰ฌ(Mesh)๋ฅผ ์ž˜๊ฒŒ ์งœ๋Š” ๊ฒƒ์€ ํ•ด์„ ์—ฐ์‚ฐ ๋น„์šฉ(Computational Cost) ์ธก๋ฉด์—์„œ ๋ถˆ๊ฐ€๋Šฅ์— ๊ฐ€๊น์Šต๋‹ˆ๋‹ค. ์ด๋ฅผ ํ•ด๊ฒฐํ•˜๊ธฐ ์œ„ํ•ด ์„œ๋ธŒ๋ชจ๋ธ๋ง ์ ˆ์ฐจ๋ฅผ ์ ์šฉํ•ฉ๋‹ˆ๋‹ค.

  1. ๊ธ€๋กœ๋ฒŒ ๋ชจ๋ธ ํ•ด์„ (Global Model): ๋ชจ๋“ˆ ์ „์ฒด๋ฅผ ๊ฑฐ์นœ ๋ฉ”์‰ฌ(Coarse Mesh)๋กœ ํ•ด์„ํ•˜์—ฌ TC ์กฐ๊ฑด(-40ยฐC ~ 150ยฐC ํ”„๋กœํŒŒ์ผ) ํ•˜์—์„œ์˜ ์ „์ฒด์ ์ธ ๋ณ€ํ˜•๋Ÿ‰(Displacement) ๊ฒฐ๊ณผ๋ฅผ ์‚ฐ์ถœ.
  2. ๊ตฌ์—ญ ์„ ์ • (Cut-boundary Determination): ์‘๋ ฅ ์ง‘์ค‘์ด ๊ฐ€์žฅ ์‹ฌํ•˜๊ฒŒ ๋‚˜ํƒ€๋‚œ ์ตœ์™ธ๊ฐ ๋‹ค์ด ๊ฒฝ๊ณ„๋ถ€ ์†”๋” ์กฐ์ธํŠธ๋ฅผ ์ง€์ •.
  3. ๋กœ์ปฌ ์„œ๋ธŒ๋ชจ๋ธ ํ•ด์„ (Submodel): ์ง€์ • ์˜์—ญ๋งŒ ์ •๋ฐ€ ์ •์œก๊ฐํ˜• ์กฐ ์š”์†Œ(Hexahedral Fine Mesh)๋กœ ์ดˆ๋ฐ€๋„๊ฒฉ์ž๋ฅผ ์žฌ๊ตฌ์„ฑํ•œ ๋’ค, ๊ธ€๋กœ๋ฒŒ ๋ชจ๋ธ์—์„œ ์–ป์€ ๋ณ€์œ„ ๊ฒฐ๊ณผ๋ฅผ ๊ฒฝ๊ณ„ ์กฐ๊ฑด(Cut-boundary Constraint)์œผ๋กœ ๋งคํ•‘ํ•˜์—ฌ ์ •๋ฐ€ ์‘๋ ฅ/๋ณ€ํ˜•๋ฅ  ์‚ฐ์ถœ.

๋‹ค. ๊ณผ๋„ ์ˆ˜์†Œ์น˜ ์ปคํ”Œ๋ง ๋ฐ ๋น„์„ ํ˜• ์ˆ˜๋ ด์„ฑ ์ตœ์ ํ™” ํŠธ๋Ÿฌ๋ธ”์ŠˆํŒ…

์˜จ๋„ ๋ณ€ํ™”์œจ(Ramp Rate: ์˜ˆ 10ยฐC/min) ๋ฐ ์œ ์ง€ ์‹œ๊ฐ„(Dwell Time: 30min)์— ๋”ฐ๋ฅธ ์—ด์ „๋„ ํ•ด์„ ๊ฒฐ๊ณผ๊ฐ€ ๊ณผ๋„ ๊ตฌ์กฐ ํ•ด์„(Transient Structural Analysis)์˜ ์—ดํ•˜์ค‘(Thermal Load)์œผ๋กœ ์‹ค์‹œ๊ฐ„ ๋™๊ธฐํ™”๋˜์–ด์•ผ ํ•ฉ๋‹ˆ๋‹ค. ์ด๋•Œ ๋ฐœ์ƒํ•˜๋Š” ๋น„์„ ํ˜• ๋ฐœ์‚ฐ(Non-linear Divergence) ๋ฌธ์ œ ์ตœ์ ํ™” ํŒ์ž…๋‹ˆ๋‹ค.

  • ์‹œ๊ฐ„ ์Šคํ… ์‚ฌ์ด์ฆˆ ํ†ต์ œ (Auto Time Stepping): ์˜จ๋„ ๋ณ€ํ™”๊ฐ€ ๊ธ‰๊ฒฉํžˆ ์ผ์–ด๋‚˜๋Š” Ramp ๊ตฌ๊ฐ„๊ณผ ํฌ๋ฆฌํ”„ ๋ณ€ํ˜•์ด ์ง‘์ค‘๋˜๋Š” Dwell ์ดˆ์ž… ๊ตฌ๊ฐ„์— Substep ํฌ๊ธฐ๋ฅผ $10^{-3}$ ์ดˆ ์ˆ˜์ค€์œผ๋กœ ์„ธ๋ถ„ํ™”ํ•˜๋„๋ก Initial/Minimum Substep ์„ค์ •.
  • Darveaux ํ”ผ๋กœ ์ˆ˜๋ช… ์˜ˆ์ธก ๋ชจ๋ธ ์—ฐ๊ณ„: ์‹œ๋ฎฌ๋ ˆ์ด์…˜์„ ํ†ตํ•ด ๊ณ„์‚ฐ๋œ ์†”๋” 1 ์‚ฌ์ดํด๋‹น ๋น„๊ฐ€์—ญ ๋น„์†Œ์„ฑ ์†Œ์‚ฐ ์—๋„ˆ์ง€ ๋ฐ€๋„ ์ฆ๊ฐ€๋Ÿ‰($\Delta W_{acc}$)์„ ์ถ”์ถœํ•˜์—ฌ ์•„๋ž˜ Darveaux ์ˆ˜์‹์— ์ ์šฉ, ๊ท ์—ด ์ƒ์„ฑ ์‚ฌ์ดํด($N_o$) ๋ฐ ๊ท ์—ด ์ง„์ „ ์†๋„($da/dN$)๋ฅผ ์ •๋Ÿ‰์ ์œผ๋กœ ๋„์ถœํ•ฉ๋‹ˆ๋‹ค.

No = K1 ร— (ฮ”Wacc)K2
da/dN = K3 ร— (ฮ”Wacc)K4

4. ๊ฒ€์ฆ ๋ฐ ๊ณ„์ธก ๊ธฐ์ˆ  (Validation & Fail Analysis)

์ˆ˜๋ถ„ ํ•ด์„ ๋ฐ ๋Œ€์ฑ… ์ˆ˜๋ฆฝ ํ›„ ์‹ค์ œ ์‹ ๋ขฐ์„ฑ ์‹œํ—˜ ์ƒ˜ํ”Œ์„ ๊ฒ€์ฆํ•˜๊ธฐ ์œ„ํ•œ ๋น„ํŒŒ๊ดด ๋ฐ ํŒŒ๊ดด ๋ถ„์„ ๋ฐฉ๋ฒ•์ž…๋‹ˆ๋‹ค.

  • ์ดˆ์ŒํŒŒ ํƒ์ƒ ํ˜„๋ฏธ๊ฒฝ (C-SAM, C-Mode Scanning Acoustic Microscopy): ๋ชจ๋“ˆ์„ ํ•ด์ฒดํ•˜์ง€ ์•Š๊ณ  ์†”๋” ์ ‘ํ•ฉ๋ถ€ ๋‚ด๋ถ€์˜ ๋ฐ•๋ฆฌ(Delamination) ๋ฐ ๊ท ์—ด ์ง„์ „ ์ƒํƒœ๋ฅผ 10ใŽ› ๋ถ„ํ•ด๋Šฅ ์ˆ˜์ค€์œผ๋กœ ้žํŒŒ๊ดด ์ด๋ฏธ์ง• ๊ธฐ๋ฒ•์œผ๋กœ ๊ณ„์ธก.
  • ๊ณผ๋„ ์—ด์ €ํ•ญ ์ธก์ • ์‹œ์Šคํ…œ (Transient Thermal Impedance, Zth): $Z_{th}$ ํŠน์„ฑ ๊ณก์„  ๋ณ€ํ™”๋ฅผ ๊ฐ์ง€ํ•˜์—ฌ ์นฉ์—์„œ ์ฟจ๋ง ๊ตฌ์กฐ๊นŒ์ง€์˜ ์—ด ์ „๋‹ฌ ๊ฒฝ๋กœ ์ค‘ ์–ด๋–ค ๋ ˆ์ด์–ด(Chip attach vs System solder)์— ๊ฐญ ๊ท ์—ด์ด ์ƒ๊ฒผ๋Š”์ง€ ์ „๊ธฐ์  ์ •๋ฐ€ ์ถ”์ .
  • ๋‹จ๋ฉด SEM/EDX ๋ถ„์„ (Cross-sectional SEM Analysis): ํฌ๋กœ์Šค ์„น์…˜ ์ •๋ฐ€ ํด๋ฆฌ์‹ฑ ํ›„ ์ „์žํ˜„๋ฏธ๊ฒฝ์„ ํ™œ์šฉํ•˜์—ฌ IMC ๊ณ„๋ฉด ํฌ๋ž™, ๊ฒฐ์ •๋ฆฝ ์„ฑ์žฅ ํ˜•ํƒœ ๋ฐ ์ƒ๋ถ„๋ฆฌ(Phase Coarsening) ํ˜„์ƒ์„ ๊ด€์ฐฐ.


๊ฒฐ๋ก  ๋ฐ ์—”์ง€๋‹ˆ์–ด๋ง ๊ฐ€์ด๋“œ ์š”์•ฝ

์ฐจ๋Ÿ‰์šฉ ์ „๋ ฅ๋ฐ˜๋„์ฒด ๋ชจ๋“ˆ์˜ TC ์‹ ๋ขฐ์„ฑ ์‹œํ—˜ ์ค‘ ๋ฐœ์ƒํ•˜๋Š” ์†”๋” ์กฐ์ธํŠธ ์—ดํ”ผ๋กœ ๊ท ์—ด ๋ฌธ์ œ๋Š” ๋‹จ์ˆœํžˆ ์†”๋” ์žฌ์งˆ ํ•˜๋‚˜๋ฅผ ๋ฐ”๊พผ๋‹ค๊ณ  ํ•ด์„œ ์™„๋ฒฝํžˆ ํ•ด๊ฒฐ๋˜์ง€ ์•Š์Šต๋‹ˆ๋‹ค. ์žฌ๋ฃŒ์˜ ๋ฌผ๋ฆฌ์  ํŠน์„ฑ(CTE, ์˜๋ฅ ), ๊ตฌ์กฐ์  ์‘๋ ฅ ์™„ํ™” ๋””์ž์ธ, ๊ณต์ • ๋‚ด ๋ณด์ด๋“œ ํ†ต์ œ, ๊ทธ๋ฆฌ๊ณ  ์ •ํ™•ํ•œ ๊ณผ๋„ ์—ด์‘๋ ฅ ํ•ด์„ ์‹œ๋ฎฌ๋ ˆ์ด์…˜ ๊ธฐ๋ฒ•์ด ์‚ผ์œ„์ผ์ฒด๋กœ ์—ฐ๋™๋˜์–ด์•ผ ํ•ฉ๋‹ˆ๋‹ค.

ํ•ต์‹ฌ ์š”์•ฝ ์ ˆ์ฐจ๋Š” ๋‹ค์Œ๊ณผ ๊ฐ™์Šต๋‹ˆ๋‹ค.

  • ์†Œ์žฌ ๊ด€์ : High-power ๋ฐ SiC ๋ชจ๋“ˆ์—๋Š” Ag Sintering ์ ‘ํ•ฉ ๊ธฐ์ˆ ์„ ์šฐ์„  ๊ณ ๋ คํ•˜๊ณ , ์†”๋”๋ง ์œ ์ง€ ์‹œ Innolot ๋“ฑ ๊ณ ์‹ ๋ขฐ์„ฑ ๋‹ค์›๊ณ„ ํ•ฉ๊ธˆ ์ ์šฉ.
  • ๊ตฌ์กฐ ๊ด€์ : Si3N4 ์ ˆ์—ฐ ๊ธฐํŒ ๋„์ž…์„ ํ†ตํ•œ CTE mismatch ์ฐจ์ด ๊ทผ๋ณธ์  ์ถ•์†Œ.
  • ํ•ด์„ ๊ด€์ : Anand ํฌ๋ฆฌํ”„ ๋ชจ๋ธ๊ณผ ์„œ๋ธŒ๋ชจ๋ธ๋ง ๊ธฐ๋ฒ•์„ ํ˜ผํ•ฉํ•˜์—ฌ ๋น„๊ฐ€์—ญ ๋ณ€ํ˜• ์—๋„ˆ์ง€ ๋ฐ€๋„($\Delta W_{acc}$) ๊ธฐ๋ฐ˜์˜ ํ”ผ๋กœ ์ˆ˜๋ช… ์‚ฌ์ „ ๊ฒ€์ฆ ์‹œ์Šคํ…œ ๊ตฌ์ถ•.

์œ„ ํŠธ๋Ÿฌ๋ธ”์ŠˆํŒ… ๊ฐ€์ด๋“œ๋ฅผ ํ†ตํ•ด ์ œํ’ˆ ์„ค๊ณ„ ์ดˆ๊ธฐ ๋‹จ๊ณ„๋ถ€ํ„ฐ ๊ณผ๋„ ์—ด์‘๋ ฅ์„ ํ†ต์ œํ•จ์œผ๋กœ์จ ์ฐจ๋Ÿ‰์šฉ ์‹ ๋ขฐ์„ฑ ๊ทœ๊ฒฉ์„ ์™„๋ฒฝํ•˜๊ฒŒ ์ถฉ์กฑํ•˜๋Š” ์ฐจ์„ธ๋Œ€ ์ „๋ ฅ๋ชจ๋“ˆ ๋ชจ๋“ˆ์„ ์„ฑ๊ณต์ ์œผ๋กœ ๊ฐœ๋ฐœํ•˜์‹œ๊ธฐ ๋ฐ”๋ž๋‹ˆ๋‹ค.

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